Papers, Articles, Presentations

Learn how GaN Systems has solved size, efficiency and system cost challenges.

Document name Date
A Modular Designed Three-phase High-efficiency High-power-density EV Battery Charger Using Dual/Triple-Phase-Shift Control - Available with IEEE membership 2017 Nov
Utilizing GaN transistors in 48V communications DC-DC converter design 2017 Nov
New tools for driving GaN E-HEMT transistors 2017 Oct
A high power-density and high efficiency insulated metal substrate based GaN HEMT power module - Available with IEEE membership 2017 Oct
Critical transient processes of enhancement-mode GaN HEMTs in high-efficiency and high-reliability applications 2017 Oct
A novel energy balanced variable frequency control for input-series-output-parallel modular EV fast charging stations - Available with IEEE membership 2017 Sep
Applying Variable-Switching-Frequency Variable-Phase-Shift Control and E-Mode GaN HEMTs to an Indirect Matrix Converter-Based EV Battery Charger - Available with IEEE membership 2017 Jul
The Benefits of Gallium Nitride Power Transistors Span Multiple Markets 2017 Jun
A Performance Comparison of GaN E-HEMTs versus SiC MOSFETs 2017 Jun
System Level Advantages of Designing with GaN 2017 May
Paralleled GaN Transistors Boost Converter Power Up to 100 kW 2017 May
A model-based buck-type active filter using proportional-resonant controller and GaN HEMTs - Available with IEEE membership 2017 Mar
Paralleling GaN E-HEMTs in 10kW–100kW systems - Available with IEEE membership 2017 Mar
A Novel Power Inverter Design Using GaN Transistors Produces a Power Density of 61.2 W/in3 2016 Sep
SiC and GaN vs. IGBTs: The Imminent Tug of War for Supremacy 2016 Jul
Paralleling GaN E-HEMTs in 10kW-100kW Systems - Available with IEEE membership 2016 Jul
Integration or Optimization…Which Comes First? 2016 Jun
Level 2 Onboard Charger with GaN Semiconductors Achieves Record Efficiency 2016 Mar
Google Little Box Challenge Showcases GaN Power Element 2016 Mar
Design consideration of gate driver circuits and PCB parasitic parameters of paralleled E-mode GaN HEMTs in zero-voltage-switching applications - Available with IEEE membership 2016 Mar
An E-mode GaN HEMTs based three-level bidirectional DC/DC converter used in Robert Bosch DC-grid system - Available with IEEE membership 2015 Nov
Comparison of Silicon and GaN Transistors Leads to an Optimized Inverter Design 2015 May

 

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