Diodes
When applied to diodes, the GaN Systems unique island topology allows for ultra-low forward voltage diodes to be made. The performance of the GaN Systems diodes is shown below and compared with silicon (Si) and silicon carbide (SiC) alternatives. Si devices are not usually rated for use above 175°C or above 300 V. Most SiC diodes are also not rated for use above 175°C. The large forward voltage drop of SiC produces severe conduction losses at high temperatures. Si devices have problems with current balancing in parallel operation conditions because of their negative voltage-temperature characteristic. Both of these limitations are significant for high power switching applications.
Diode Product Line
GaN Systems’ Cool Switching™ high power diodes provide formerly unheard-of efficiencies, small size, no intrinsic charge storage and very low heat losses. In terms of overall system cost, our GaN based diodes are cost competitive with silicon, while offering superior performance to silicon carbide devices! A 6A/600V diode and an integrated 2A/600V full-bridge will be available in a demonstration kit.
Features:
- 150 to 1,200 volt product range
- 2 to 20 Amp versions
- Flip chip capability
- Multiple bonding options
- No intrinsic charge storage
- Fast recovery
- 300 °C operation
- High blocking voltage
- Safe parallel operation
Applications
- Switch mode power supplies
- UPS & motor control
- Cleantech – solar, wind & smartgrid
- Hybrid and EV battery control & health management systems
- Power factor correction controllers (PFC)