GS66508T

GS66508T

  • 650 V E-HEMT
  • GaNPX™ packaging
  • Current 30 A
  • RDS(on) 50 mΩ
  • Dimensions: 6.9 x 4.5 x 0.54 mm
  • Top-side cooled
  • Dual gate drive pins
  • Island Technology™ Transistor

 

 

Downloads

 

 

Datasheet

LTSpice

PSpice

Thermal Design

PCB Design Library

STEP
File

Evaluation board

 

 

GS66508T-EVBDB

 


 

 

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